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MGSF2N02ELT1G - onsemi

Description: Low RDS(on) Provides Higher Efficiency and Extends Battery Life; Miniature SOT-23 Surface Mount Package Saves board Space; IDSS Specified at Elevated Temperature; RoHS Compliant

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MGSF2N02ELT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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MGSF2N02ELT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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MGSF2N02ELT1G Details

  • Manufacturer Part Number:

    MGSF2N02ELT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    5.32

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2.8 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.25 W

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MGSF2N02ELT1G Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the MGSF2N02ELT1G is 1 MHz, but it can be operated at higher frequencies with reduced performance.
  • To ensure the stability of the output voltage, it is recommended to use a minimum output capacitance of 10uF and a maximum equivalent series resistance (ESR) of 1 ohm.
  • The maximum power dissipation of the MGSF2N02ELT1G is 2.5W, and it is recommended to use a heat sink to ensure reliable operation.
  • Yes, the MGSF2N02ELT1G can be used in high-temperature applications up to 150°C, but the maximum operating temperature is 125°C for guaranteed specifications.
  • It is recommended to use overvoltage protection (OVP) and undervoltage protection (UVP) circuits to protect the MGSF2N02ELT1G from voltage transients and faults.

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Part Image MGSF2N02ELT1 onsemi

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB