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MIP50R12E2ATN-BP - MCC

Description: IGBT MODULES 1200V 50A, E2A

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MIP50R12E2ATN-BP Details

  • Manufacturer Part Number:

    MIP50R12E2ATN-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.35

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PUFM-X24

  • Number of Elements:

    7

  • Number of Terminals:

    24

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    288 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    398 ns

  • Turn-on Time-Nom (ton):

    202 ns

  • VCEsat-Max:

    1.9 V

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MIP50R12E2ATN-BP Overview

Use the download button to access the MIP50R12E2ATN-BP 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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