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MIW15N120FA-BP - MCC

Description: IGBT Discrete

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Symbol
MIW15N120FA-BP - MCC - PCB symbol
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PCB Footprints
MIW15N120FA-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AB
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3D Models
MIW15N120FA-BP - MCC - 3D model - Transistor Outline, Vertical - TO-247AB
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MIW15N120FA-BP Details

  • Manufacturer Part Number:

    MIW15N120FA-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    314 ns

  • Turn-on Time-Nom (ton):

    97 ns

  • VCEsat-Max:

    2.3 V

MIW15N120FA-BP Frequently Asked Questions (FAQs)

  • The thermal resistance (RθJA) of the MIW15N120FA-BP is typically around 40°C/W, but it can vary depending on the specific application and PCB design.
  • Yes, the MIW15N120FA-BP is designed for high-reliability applications and is qualified to various industry standards, including AEC-Q101 and MIL-STD-883.
  • The recommended PCB footprint for the MIW15N120FA-BP is a standard TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • The MIW15N120FA-BP is rated for operation up to 150°C, but the maximum junction temperature (Tj) should not exceed 175°C. Derating may be necessary for high-temperature applications.
  • The recommended gate drive voltage for the MIW15N120FA-BP is 10-15V, but it can be driven with a voltage as low as 6V. However, a higher gate drive voltage may be necessary for high-frequency applications.

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MIW15N120FA-BP Overview

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