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MIW25N120FA-BP - MCC

Description: IGBT Discrete

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MIW25N120FA-BP - MCC - PCB symbol
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PCB Footprints
MIW25N120FA-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MIW25N120FA-BP
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3D Models
MIW25N120FA-BP - MCC - 3D model - Transistor Outline, Vertical - MIW25N120FA-BP
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MIW25N120FA-BP Details

  • Manufacturer Part Number:

    MIW25N120FA-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    5.35

  • Collector Current-Max (IC):

    25 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.4 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    326 W

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    414 ns

  • Turn-on Time-Nom (ton):

    190 ns

  • VCEsat-Max:

    2.3 V

MIW25N120FA-BP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MIW25N120FA-BP is a 5x5mm pad with a 0.5mm thermal pad in the center, and a 1.5mm keep-out area around the device.
  • To ensure reliable soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a solder paste with a melting point of 217°C to 221°C. Also, make sure to follow the recommended reflow soldering profile.
  • The maximum allowed voltage on the gate of the MIW25N120FA-BP is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the MIW25N120FA-BP is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
  • To calculate the power dissipation of the MIW25N120FA-BP, use the following formula: Pd = (Vds * Ids) + (Vgs * Igs) + (Rds(on) * Ids^2), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, Igs is the gate-source current, and Rds(on) is the on-state resistance.

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MIW25N120FA-BP Overview

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