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MIW40N120FLAHE3-BP - MCC

Description: IGBT Transistors Trench Field Stop IGBT 1200V 40A

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PCB Footprints
MIW40N120FLAHE3-BP - MCC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AB
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3D Models
MIW40N120FLAHE3-BP - MCC  - 3D model - Transistor Outline, Vertical - TO-247AB
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MIW40N120FLAHE3-BP Details

  • Manufacturer Part Number:

    MIW40N120FLAHE3-BP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    6

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • VCEsat-Max:

    2.3 V

MIW40N120FLAHE3-BP Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MIW40N120FLAHE3-BP is a 4-pin TO-220 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to keep the junction temperature (Tj) below 150°C. Additionally, ensure proper thermal design and layout to minimize thermal resistance.
  • The maximum allowed voltage transient for the MIW40N120FLAHE3-BP is 120% of the maximum rated voltage (Vds) for a duration of less than 10ms. Exceeding this limit may cause damage to the device.
  • Yes, the MIW40N120FLAHE3-BP can be used in switching applications, but it is essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range (typically up to 100kHz).
  • To protect the MIW40N120FLAHE3-BP from ESD, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures to prevent ESD damage.

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MIW40N120FLAHE3-BP Overview

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