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MJ10012 - NTE ELECTRONICS

Description: NPN Silicon Power Darlington Transistor

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MJ10012 - NTE ELECTRONICS PCB footprint - Other - Other - MJ10012-4
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MJ10012 Details

  • Manufacturer Part Number:

    MJ10012

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    NTE Electronics Inc

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Base Capacitance-Max:

    350 pF

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-3

  • JESD-30 Code:

    O-MBFM-P2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    175 W

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    2.5 V

MJ10012 Frequently Asked Questions (FAQs)

  • The MJ10012 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Typically, a base-emitter voltage (Vbe) of 0.7V to 1.0V and a collector-emitter voltage (Vce) of 10V to 20V are suitable for most applications.
  • The maximum collector current (IC) rating for the MJ10012 is 10A. However, it's essential to consider the power dissipation and thermal management to prevent overheating.
  • While the MJ10012 can be used as a switch, it's not ideal for high-frequency applications due to its relatively high transition frequency (ft) of 30 MHz. For high-frequency applications, consider using a transistor with a higher ft rating.
  • To protect the MJ10012 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Additionally, consider using ESD protection devices or circuits in your design.

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