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MJ11012G - onsemi

Description: Junction Temperature to +200°C; High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc; Monolithic Construction with Built-in Base Emitter Shunt Resistor

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MJ11012G Details

  • Manufacturer Part Number:

    MJ11012G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Package Description:

    CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJ11012G Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the MJ11012G is 10V to 30V, with a typical voltage of 12V.
  • To ensure proper biasing, connect the base of the transistor to a voltage source through a resistor, and connect the emitter to ground through a resistor. The collector should be connected to the load.
  • The maximum current rating for the MJ11012G is 10A, with a peak current rating of 15A.
  • To protect the MJ11012G from overheating, ensure proper heat sinking, use a heat sink with a thermal resistance of 1°C/W or less, and keep the junction temperature below 150°C.
  • Yes, the MJ11012G can be used in switching applications, but it's essential to ensure the transistor is properly biased and the switching frequency is within the recommended range.

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Part Image MJ11012 Central Semiconductor Corp

Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

Part Image MJ11012 onsemi

Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin