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MJ11029 - onsemi

Description: High−Current Complementary Silicon Power Transistors 50 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 60 − 120 VOLTS 300 WATTS

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MJ11029 - onsemi PCB footprint - Other - Other - TO−204 (TO−3)(Thickness=8.51mm)
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MJ11029 - onsemi  - 3D model - Other - TO−204 (TO−3)(Thickness=8.51mm)
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MJ11029 Details

  • Manufacturer Part Number:

    MJ11029

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3

  • Pin Count:

    2

  • Manufacturer Package Code:

    CASE 197A-05

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    400

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MJ11029 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ11029 is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the onsemi application note AND8039/D, which provides SOA curves for similar devices.
  • Proper thermal management is crucial for the MJ11029. Ensure a good thermal interface between the device and the heat sink, and follow the recommended thermal resistance values (RθJA and RθJC) provided in the datasheet. Additionally, consider using a heat sink with a thermal conductivity of at least 1°C/W.
  • The recommended gate drive voltage for the MJ11029 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure the gate drive voltage is within the recommended range to avoid damage to the device.
  • Yes, the MJ11029 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the MJ11029 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design.

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Part Image MJ11029G onsemi

Power Bipolar Transistor, 50A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin