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MJ11032 - onsemi

Description: TRANS NPN DARL 120V 50A TO204

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MJ11032 - onsemi PCB footprint - Other - Other - MJ11032-7
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MJ11032 - onsemi  - 3D model - Other - MJ11032-7
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MJ11032 Details

  • Manufacturer Part Number:

    MJ11032

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3

  • Pin Count:

    2

  • Manufacturer Package Code:

    CASE 197A-05

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    400

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MJ11032 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ11032 is not explicitly stated in the datasheet. However, it's recommended to follow the guidelines provided in the onsemi application note AND8033/D, which provides SOA curves for similar devices.
  • To ensure the MJ11032 is properly biased for linear operation, follow the recommended biasing scheme outlined in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply. Additionally, ensure the base-emitter voltage (Vbe) is within the recommended range (typically 0.6-0.8V) to maintain linear operation.
  • For optimal thermal management, ensure the MJ11032 is mounted on a heat sink with a thermal resistance (Rth) of ≤ 1°C/W. Use a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K to minimize thermal resistance. Additionally, consider using a fan or other cooling system to maintain a safe operating temperature.
  • While the MJ11032 is primarily designed for linear applications, it can be used in switching applications with caution. However, be aware that the device may not be optimized for high-frequency switching, and the switching losses may be higher than those of a dedicated switching transistor. Consult the datasheet and application notes for guidance on using the MJ11032 in switching applications.
  • To ensure electrostatic discharge (ESD) protection for the MJ11032, follow proper handling and storage procedures, such as using ESD-safe materials, grounding straps, and ionizers. Additionally, consider using ESD protection devices, such as TVS diodes or ESD arrays, in the circuit design to protect the transistor from ESD events.

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Part Image MJ11032G onsemi

Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin