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MJ14001G - onsemi

Description: Power 60A 60V Discrete PNP

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MJ14001G - onsemi  - 3D model
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MJ14001G Details

  • Manufacturer Part Number:

    MJ14001G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-204 (TO-3)

  • Pin Count:

    2

  • Manufacturer Package Code:

    197A-05

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    300 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJ14001G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ14001G is not explicitly stated in the datasheet. However, according to onsemi's application notes, the device can operate safely within the boundaries of VCE = 100V, IC = 10A, and Ptot = 150W.
  • To ensure linear operation, the MJ14001G requires a bias voltage of around 2-3V between the base and emitter (VBE). A resistor network or a voltage regulator can be used to establish this bias voltage. Additionally, the collector-emitter voltage (VCE) should be maintained above 5V to prevent saturation.
  • The MJ14001G has a high power dissipation capability, and a proper heatsink design is crucial. A heatsink with a thermal resistance of around 1-2°C/W is recommended. The heatsink should be designed to provide good thermal contact with the device, and thermal interface materials (TIMs) can be used to reduce thermal resistance.
  • While the MJ14001G is primarily designed for linear applications, it can be used in switching applications with some caution. The device has a relatively slow switching time (around 1-2μs), which may not be suitable for high-frequency switching applications. However, it can be used in low-frequency switching applications, such as in power supplies or motor control circuits.
  • The MJ14001G is sensitive to electrostatic discharge (ESD). To protect the device, it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.

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MJ14001G Overview

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Image Part Number Model
Part Image MJ14003 Rochester Electronics LLC

60A, 80V, PNP, Si, POWER TRANSISTOR, TO-204AA, CASE 197A-05, TO-3, TO-204, 2 PIN

Part Image MJ14001 onsemi

Power Bipolar Transistor, 60A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-204AA, Metal, 2 Pin