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MJ15003G - onsemi

Description: For Low Distortion Complementary Designs; High Safe Operating Area (100% Tested) - 5.0 A @ 50 V; High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc

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MJ15003G Details

  • Manufacturer Part Number:

    MJ15003G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-204 (TO-3)

  • Pin Count:

    2

  • Manufacturer Package Code:

    1-07

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    140 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    250 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJ15003G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJ15003G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-60% of its maximum rating to ensure reliable operation.
  • To ensure the MJ15003G is properly biased for linear operation, it's essential to set the base-emitter voltage (Vbe) to around 0.65-0.7V and the collector-emitter voltage (Vce) to around 1-2V. This can be achieved by using a voltage divider network or a biasing circuit that provides a stable voltage reference.
  • For optimal thermal performance, it's recommended to use a PCB layout that provides good thermal conduction and minimal thermal resistance. This can be achieved by using a copper pour or a thermal pad under the device, and ensuring good airflow around the component. Additionally, using a heat sink or a thermal interface material can help to further reduce the device's junction temperature.
  • While the MJ15003G is primarily designed for linear applications, it can be used in switching applications with some limitations. The device's switching frequency should be limited to around 100 kHz to 1 MHz, and the collector current should be limited to around 1-2A to avoid excessive power dissipation and ensure reliable operation.
  • To protect the MJ15003G from electrostatic discharge (ESD), it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit. Additionally, handling the device with ESD-safe materials and tools, and using an ESD-safe workstation can help to prevent ESD damage.

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MJ15003G Overview

Use the download button to access the MJ15003G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image MJ15003 TT Electronics Resistors

Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

Part Image MJ15003 onsemi

Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin