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MJD122-1 - STMicroelectronics

Description: Low voltage NPN power Darlington transistor

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MJD122-1 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-252 (DPAK) mechanical data-
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MJD122-1 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - TO-252 (DPAK) mechanical data-
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MJD122-1 Details

  • Manufacturer Part Number:

    MJD122-1

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-251AA

  • Package Description:

    TO-251, IPAK-3

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJD122-1 Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a large copper area connected to the tab of the device to ensure good thermal dissipation. A minimum of 2 oz copper thickness is recommended.
  • The MJD122-1 requires a bias voltage of 5V to 15V, and a bias current of 1mA to 10mA. Ensure the bias circuit is designed to provide a stable voltage and current to the device.
  • The maximum allowed power dissipation for the MJD122-1 is 2W. Ensure the device is operated within this limit to prevent overheating and damage.
  • Handle the device with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.
  • The recommended storage temperature range for the MJD122-1 is -40°C to 125°C. Ensure the device is stored within this range to prevent damage.

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MJD122-1 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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Part Image KSH122ITU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin

Part Image KSH122ITU onsemi

NPN Silicon Darlington Transistor, IPAK-3 / DPAK-3 STRAIGHT LEAD, 5040-TUBE

Part Image KSH122-I Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

Part Image KSH122-I Samsung Semiconductor

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3

Part Image KSH122I Fairchild Semiconductor Corporation

8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251, IPAK-3

For a full list of alternate parts for MJD122-1, check out Findchips.com