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MJD122-TP - MCC

Description: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 1.5 W Surface Mount DPAK

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MJD122-TP - MCC PCB footprint - Other - Other - MJD122-TP-3
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MJD122-TP - MCC  - 3D model - Other - MJD122-TP-3
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MJD122-TP Details

  • Manufacturer Part Number:

    MJD122-TP

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Micro Commercial Components

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Base Capacitance-Max:

    200 pF

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    1000

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    4 V

MJD122-TP Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MJD122-TP is -55°C to 150°C.
  • Yes, the MJD122-TP is suitable for high-frequency applications up to 1 GHz due to its low capacitance and high transition frequency (fT).
  • The recommended storage temperature range for the MJD122-TP is -55°C to 150°C.
  • Yes, the MJD122-TP can be used in switching applications due to its low saturation voltage and high current gain.
  • No, the MJD122-TP is not radiation-hardened. It is not designed for use in radiation-intensive environments.

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MJD122-TP Overview

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Part Image MJD122 Fairchild Semiconductor Corporation

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Part Image MJD122-T1 Samsung Semiconductor

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For a full list of alternate parts for MJD122-TP, check out Findchips.com