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MJD122G - onsemi

Description: Straight Lead Version in Plastic Sleeves ("-1" Suffix); Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); High DC Current Gain hFE = 2,500 (Typ) @ IC = 4.0 Adc; Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix); Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications

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MJD122G Details

  • Manufacturer Part Number:

    MJD122G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJD122G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD122G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating in the saturation region for extended periods.
  • To ensure the MJD122G is properly biased for linear operation, it's essential to set the quiescent current (Iq) to the recommended value, typically around 10-20 mA. This can be achieved by adjusting the base resistor (Rb) and emitter resistor (Re) values. Additionally, ensure the collector-emitter voltage (Vce) is within the recommended range, typically around 10-20 V.
  • For optimal performance and thermal management, it's recommended to use a multi-layer PCB with a solid ground plane, and to place the MJD122G near a heat sink or thermal pad. Ensure good thermal conductivity between the device and the heat sink, and consider using thermal interface materials (TIMs) if necessary. Follow standard PCB design guidelines for high-power devices, such as using wide traces and minimizing thermal resistance.
  • To protect the MJD122G from electrostatic discharge (ESD), follow standard ESD protection guidelines, such as using ESD-sensitive handling procedures, storing the devices in anti-static packaging, and using ESD-protective workstations. Additionally, consider adding ESD protection circuits, such as TVS diodes or ESD protection arrays, to the PCB design.
  • Follow standard soldering and assembly guidelines for high-power devices, such as using a controlled soldering iron temperature (around 250°C), and ensuring the device is properly secured to the PCB using a suitable adhesive or mechanical fastening. Avoid overheating the device during soldering, and ensure the PCB is designed to accommodate the device's thermal and mechanical stresses.

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MJD122G Overview

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Part Image MJD122 Motorola Semiconductor Products

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Part Image CJD122 Central Semiconductor Corp

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Part Image MJD122 Fairchild Semiconductor Corporation

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Part Image MJD122-T1 Samsung Semiconductor

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Part Image KSH122 Samsung Semiconductor

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For a full list of alternate parts for MJD122G, check out Findchips.com