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MJD122T4 - onsemi

Description: Obsolete - 8.0 A, 100 V NPN Darlington Bipolar Power Transistor

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MJD122T4 - onsemi PCB footprint - Other - Other - DPAK (SINGLE GAUGE)CASE 369C ISSUE G_2024
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MJD122T4 Details

  • Manufacturer Part Number:

    MJD122T4

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    PLASTIC, CASE 369C-01, DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJD122T4 Frequently Asked Questions (FAQs)

  • The maximum SOA for the MJD122T4 is typically defined by the voltage and current ratings, but it's recommended to consult the application note AN10460 for more information on SOA and thermal derating.
  • To ensure proper biasing, follow the recommended biasing circuit and component values provided in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.
  • For optimal thermal performance, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Consult the application note AN10460 for more information on thermal management.
  • Yes, the MJD122T4 is suitable for high-frequency switching applications, but ensure that the switching frequency is within the recommended range and that proper layout and decoupling are used to minimize electromagnetic interference (EMI).
  • To protect the MJD122T4 from ESD, follow proper handling and storage procedures, use ESD-safe materials and tools, and consider using ESD protection devices in the circuit.

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MJD122T4 Overview

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Part Image MJD122-TP Micro Commercial Components

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD122 Motorola Semiconductor Products

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD122 Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD122 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD122-T1 Samsung Semiconductor

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD122T4, check out Findchips.com