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MJD122T4G - onsemi

Description: Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 4MHz 1.75 W Surface Mount DPAK , -65°C ~ 150°C (TJ)

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PCB Footprints
MJD122T4G - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.28, 2.29P CASE 369C ISSUE J
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3D Models
MJD122T4G - onsemi  - 3D model - Other - DPAK3 6.10x6.54x2.28, 2.29P CASE 369C ISSUE J
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MJD122T4G Details

  • Manufacturer Part Number:

    MJD122T4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJD122T4G Frequently Asked Questions (FAQs)

  • The MJD122T4G can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • The MJD122T4G requires a bias voltage of 5V to 12V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.
  • The maximum power dissipation for the MJD122T4G is 1.5W. Ensure proper heat sinking and thermal management to prevent overheating.
  • Yes, the MJD122T4G can be used in switching applications, but ensure the switching frequency is within the recommended range of 100kHz to 1MHz, and the device is properly biased and heat-sunk.
  • Handle the MJD122T4G with ESD-safe materials, and ensure the device is properly grounded during handling and assembly. Use ESD protection devices, such as TVS diodes, if necessary.

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MJD122T4G Overview

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For a full list of alternate parts for MJD122T4G, check out Findchips.com