Part Image

MJD127T4 - STMicroelectronics

Description: Bipolar (BJT) Transistor PNP - Darlington 100 V 8 A 20 W Surface Mount DPAK , 150°C

Download MJD127T4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MJD127T4 - STMicroelectronics PCB footprint - Other - Other - DPAK (TO-252)_2026-1.11
click to zoom
3D Models
MJD127T4 - STMicroelectronics  - 3D model - Other - DPAK (TO-252)_2026-1.11
click to zoom

MJD127T4 Details

  • Manufacturer Part Number:

    MJD127T4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-252

  • Package Description:

    ROHS COMPLIANT, DPAK-2/3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    20 W

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    4 V

MJD127T4 Frequently Asked Questions (FAQs)

  • The MJD127T4 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • To ensure proper biasing, connect the base to the emitter through a resistor (Rb) and the collector to the emitter through another resistor (Rc). The recommended values are Rb = 1 kΩ and Rc = 2.2 kΩ.
  • To minimize thermal resistance, use a thermal pad on the PCB, and ensure the transistor is placed near a heat sink or a thermal via. Keep the thermal pad as large as possible and use thermal vias to dissipate heat efficiently.
  • Yes, the MJD127T4 can be used in switching applications. However, be aware of the maximum switching frequency (typically up to 100 kHz) and ensure the transistor is properly biased to avoid overheating.
  • To protect the MJD127T4 from ESD, use anti-static packaging, handle the device by the body or with an anti-static wrist strap, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MJD127T4 Overview

Use the download button to access the MJD127T4 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD12, or try a keyword search, such as Power Bipolar Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to MJD127T4

Showing 0 results

MJD127T4 Alternates

Showing results

Image Part Number Model
Part Image MJD127T4 Motorola Semiconductor Products

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image CJD127TR13 Central Semiconductor Corp

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD127TF onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD127 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image KSH127 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD127T4, check out Findchips.com