Description:High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA
The recommended PCB layout for optimal thermal performance involves using a thermal pad on the bottom of the device, connecting it to a large copper area on the PCB, and using thermal vias to dissipate heat to the other side of the board. A minimum of 2oz copper thickness is recommended.
To ensure reliable operation at high temperatures, it is essential to follow the recommended derating curves for voltage and current, and to ensure that the device is properly heatsinked. Additionally, the device should be operated within the specified junction temperature range of -40°C to 150°C.
The MJD253-1G has built-in ESD protection, but it is still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended.
Yes, the MJD253-1G can be used in switching applications, but it is essential to ensure that the device is properly snubbed to prevent voltage spikes and ringing. A snubber circuit consisting of a resistor and capacitor in series can be used to achieve this.
The recommended storage temperature range for the MJD253-1G is -40°C to 150°C. Storage outside of this range can affect the device's reliability and performance.
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MJD253-1G Overview
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