Part Image

MJD31CT4G - onsemi

Description: Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1G"Suffix); Lead Formed Version in 16 mm Tape and Reel ("T4G" Suffix); Electrically Similar to Popular TIP31 and TIP32 Series; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant

Download MJD31CT4G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
MJD31CT4G - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

MJD31CT4G Details

  • Manufacturer Part Number:

    MJD31CT4G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJD31CT4G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD31CT4G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and that the junction temperature remains below 150°C.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (β) and ensure that the base current is sufficient to maintain the desired collector current.
  • For optimal thermal performance, ensure that the PCB layout provides adequate heat dissipation paths, such as thermal vias and heat sinks. Follow standard PCB design practices, including using a solid ground plane, minimizing trace lengths, and using thermal relief patterns around the device. Consult the datasheet for specific thermal resistance (RθJA) and thermal impedance (ZθJA) values.
  • Yes, the MJD31CT4G can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency (ft), rise and fall times, and the maximum collector current. Ensure that the device is properly biased and that the switching frequency is within the recommended range to avoid overheating and ensure reliable operation.
  • To prevent electrostatic discharge (ESD) damage, follow standard ESD protection practices, such as using ESD-sensitive handling procedures, ESD-protective packaging, and ESD-protection devices (e.g., TVS diodes) in the circuit design. Consult the datasheet for specific ESD ratings and recommendations.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

MJD31CT4G Overview

Use the download button to access the MJD31CT4G 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like MJD31, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJD31CT4G

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

MJD31CT4G Alternates

Showing results

Image Part Number Model
Part Image MJD31CRLG onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD31CETF-SN00207 onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD31CRL onsemi

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD31C Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image KSH31C Fairchild Semiconductor Corporation

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD31CT4G, check out Findchips.com