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MJD340T4 - onsemi

Description: Obsolete - 0.5 A, 300 V High Voltage NPN Bipolar Power Transistor

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MJD340T4 - onsemi PCB footprint - Other - Other - MJD340T4-1
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MJD340T4 Details

  • Manufacturer Part Number:

    MJD340T4

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK (SINGLE GAUGE) TO-252

  • Package Description:

    PLASTIC, CASE 369C, DPAK-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    369C

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJD340T4 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD340T4 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure the MJD340T4 is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The exact biasing conditions may vary depending on the specific application and circuit design.
  • The recommended PCB layout and thermal management for the MJD340T4 involve using a heat sink with a thermal resistance of around 1°C/W or lower, and ensuring good thermal conductivity between the device and the heat sink. The PCB layout should also be designed to minimize thermal resistance and ensure good airflow around the device.
  • The MJD340T4 is a general-purpose transistor and is not optimized for high-frequency applications. It has a transition frequency (fT) of around 30MHz, which makes it suitable for low-to-medium frequency applications. For high-frequency applications, a transistor with a higher fT and optimized for high-frequency operation should be used.
  • To protect the MJD340T4 from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays, and to follow proper handling and storage procedures to prevent ESD damage.

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MJD340T4 Overview

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MJD340T4 Alternates

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Image Part Number Model
Part Image MJD340T4G onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD340 Taitron Components Inc

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image KSH340 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image MJD340 onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Part Image MJD340RL onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

For a full list of alternate parts for MJD340T4, check out Findchips.com