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MJD42C1G - onsemi

Description: Obsolete - 6.0 A, 100 V PNP Bipolar Power Transistor

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MJD42C1G - onsemi PCB footprint - Other - Other - IPAK CASE 369D STYLE 1
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MJD42C1G - onsemi  - 3D model - Other - IPAK CASE 369D STYLE 1
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MJD42C1G Details

  • Manufacturer Part Number:

    MJD42C1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK INSERTION MOUNT

  • Pin Count:

    4

  • Manufacturer Package Code:

    369

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    6 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    3 MHz

MJD42C1G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJD42C1G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum power rating to ensure reliable operation.
  • To ensure the MJD42C1G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V to 0.8V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation.
  • For optimal thermal performance, it is recommended to use a PCB layout with a large copper area for heat dissipation. A thermal pad or heat sink can also be used to improve heat dissipation. Ensure that the device is mounted with a thermally conductive material, such as thermal tape or thermal grease, to improve heat transfer.
  • While the MJD42C1G is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching applications.
  • To protect the MJD42C1G from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design. Additionally, ensure that the device is handled and stored in an ESD-safe environment.

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MJD42C1G Overview

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Image Part Number Model
Part Image MJD42C-1 Rochester Electronics LLC

6A, 100V, PNP, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3

Part Image MJD42C1 onsemi

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin