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MJD44H11-1G - onsemi

Description: Bipolar Transistors - BJT 8A 80V 20W NPN

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PCB Footprints
MJD44H11-1G - onsemi PCB footprint - Other - Other - IPAK CASE 369D ISSUE C
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MJD44H11-1G - onsemi  - 3D model - Other - IPAK CASE 369D ISSUE C
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MJD44H11-1G Details

  • Manufacturer Part Number:

    MJD44H11-1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK INSERTION MOUNT

  • Pin Count:

    4

  • Manufacturer Package Code:

    369

  • Country Of Origin:

    Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJD44H11-1G Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to have a large copper area on the bottom layer of the PCB, connected to the drain pin of the MJD44H11-1G, and to use thermal vias to dissipate heat to the top layer. Additionally, keeping the PCB traces and components away from the device can help reduce thermal resistance.
  • To ensure the MJD44H11-1G is properly biased, make sure to provide a stable voltage supply to the gate pin, and ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V. Additionally, ensure the drain-source voltage (Vds) is within the recommended range of 10-30V, and the drain current (Id) is within the recommended range of 0-1A.
  • When designing a power supply with the MJD44H11-1G, critical components to consider include the input capacitor, output capacitor, and inductor. The input capacitor should be selected based on the input voltage and current requirements, the output capacitor should be selected based on the output voltage and current requirements, and the inductor should be selected based on the switching frequency and current requirements.
  • To protect the MJD44H11-1G from overvoltage and overcurrent conditions, consider adding overvoltage protection (OVP) and overcurrent protection (OCP) circuits to the design. OVP can be achieved using a voltage supervisor or a zener diode, while OCP can be achieved using a current sense resistor and a comparator.
  • Thermal management considerations for the MJD44H11-1G include ensuring good airflow around the device, using a heat sink if necessary, and keeping the device away from other heat sources. Additionally, consider using thermal interface materials (TIMs) to improve heat transfer between the device and the heat sink.

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MJD44H11-1G Overview

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MJD44H11-1G Alternates

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Part Image MJD44H11-1G Rochester Electronics LLC

8A, 80V, NPN, Si, POWER TRANSISTOR, ROHS COMPLIANT, DPAK-3

Part Image KSH44H11ITU Fairchild Semiconductor Corporation

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin

Part Image MJD44H11-1 onsemi

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

Part Image MJD44H11-I Fairchild Semiconductor Corporation

8 A, 80 V, NPN, Si, POWER TRANSISTOR, IPAK-3

Part Image KSH44H11-I Samsung Semiconductor

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for MJD44H11-1G, check out Findchips.com