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MJE13003 - onsemi

Description: 1.5 A, 400 V NPN Bipolar Power Transistor

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MJE13003 Details

  • Manufacturer Part Number:

    MJE13003

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    1.5 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

MJE13003 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE13003 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage and current ratings. A general guideline is to ensure that the device operates within the boundaries of the SOA curve provided in the datasheet.
  • To ensure the MJE13003 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the base current should be limited to prevent saturation.
  • The recommended storage temperature range for the MJE13003 is -55°C to 150°C. Storage outside of this range may affect the device's reliability and performance.
  • While the MJE13003 is primarily designed for linear applications, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Consult the datasheet and application notes for guidance on using the MJE13003 in switching applications.
  • To handle ESD protection for the MJE13003, follow proper handling and storage procedures to prevent electrostatic discharge. Use ESD-protective packaging, wrist straps, and mats when handling the device. Additionally, consider incorporating ESD protection circuits in your design to prevent damage from external ESD events.

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MJE13003 Overview

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Part Image MJE13003 General Transistor Corp

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Part Image ST83003 STMicroelectronics

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE13003G onsemi

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin

Part Image MJE13003 Micro Commercial Components

Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image MJE13003A-BP Micro Commercial Components

Power Bipolar Transistor, 1.5A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for MJE13003, check out Findchips.com