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MJE13007 - MOSPEC

Description: Bipolar Junction Transistor, NPN Type, TO-220AB

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PCB Footprints
MJE13007 - MOSPEC PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220_2024
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3D Models
MJE13007 - MOSPEC  - 3D model - Transistor Outline, Vertical - TO-220_2024
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MJE13007 Details

  • Manufacturer Part Number:

    MJE13007

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    Mospec Semiconductor Corp

  • Collector Current-Max (IC):

    8 A

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    80 W

  • Surface Mount:

    NO

  • Transition Frequency-Nom (fT):

    4 MHz

MJE13007 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MJE13007 is -55°C to 150°C, although the datasheet only specifies a storage temperature range.
  • To ensure linear operation, the MJE13007 should be biased with a collector-emitter voltage (Vce) between 2V to 10V, and a base-emitter voltage (Vbe) around 0.7V. Additionally, the collector current (Ic) should be limited to the recommended maximum value to prevent thermal runaway.
  • The maximum collector current (Ic) that the MJE13007 can handle is 1A, although the datasheet only specifies a maximum peak collector current (Icp) of 2A. It's essential to ensure the transistor is properly heat-sinked to prevent overheating.
  • Yes, the MJE13007 can be used in switching applications, but it's not ideal due to its relatively slow switching times (tf ≈ 10ns, tr ≈ 20ns). For high-frequency switching applications, a faster transistor with shorter switching times is recommended.
  • To prevent thermal runaway, ensure the transistor is properly heat-sinked, and the collector current (Ic) is limited to the recommended maximum value. Additionally, avoid operating the transistor at high temperatures (above 125°C) and high collector-emitter voltages (above 10V).

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