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MJE15031G - onsemi

Description: DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc hFE = 20 (Min) @ IC = 4.0 Adc; TO-220AB Compact Package; Collector-Emitter Sustaining Voltage - VCEO(sus) = 120 Vdc (Min) MJE15028, MJE15029 VCEO(sus) = 150 Vdc (Min) - MJE15030, MJE15031; High Current Gain - Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc; Pb-Free Packages are Available

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MJE15031G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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MJE15031G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MJE15031G Details

  • Manufacturer Part Number:

    MJE15031G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    150 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15031G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15031G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 60-70% of its maximum rating to ensure reliable operation.
  • To ensure the MJE15031G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6-0.8V, and the collector-emitter voltage (VCE) is at least 1V. Additionally, the base current should be limited to prevent saturation, and the collector current should be within the recommended operating range.
  • The recommended heatsink design for the MJE15031G depends on the specific application and operating conditions. However, a general guideline is to use a heatsink with a thermal resistance of 10-20°C/W, and to ensure good thermal contact between the device and the heatsink. The heatsink should also be designed to minimize thermal resistance and ensure good airflow.
  • While the MJE15031G is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as its rise and fall times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the MJE15031G from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package, and ESD protection devices, such as TVS diodes, can be used to protect the device from ESD events.

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