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MJE15032 - onsemi

Description: Bipolar Transistor, NPN, 250 V, 8.0 A

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MJE15032 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MJE15033
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MJE15032 - onsemi  - 3D model - Transistor Outline, Vertical - MJE15033
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MJE15032 Details

  • Manufacturer Part Number:

    MJE15032

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    50 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    30 MHz

MJE15032 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE15032 is not explicitly stated in the datasheet. However, onsemi provides a SOA curve in the datasheet, which can be used to determine the maximum safe operating conditions. As a general guideline, the transistor can handle up to 10A of collector current and 300V of collector-emitter voltage.
  • To ensure the MJE15032 is properly biased for linear operation, you should ensure that the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is around 1-2V. You can use a voltage divider circuit to set the base voltage and a current-limiting resistor to set the collector current. Additionally, you should ensure that the transistor is operated within its recommended operating conditions and that the power dissipation is within the maximum rating.
  • The thermal resistance of the MJE15032 is not explicitly stated in the datasheet. However, onsemi provides a thermal derating curve in the datasheet, which can be used to determine the maximum power dissipation at a given temperature. As a general guideline, the thermal resistance of the transistor is around 1.5°C/W for the junction-to-case thermal resistance (RθJC) and around 30°C/W for the junction-to-ambient thermal resistance (RθJA).
  • Yes, the MJE15032 can be used as a switch, but it's not the most suitable transistor for switching applications. The transistor has a relatively high saturation voltage (around 1.5V) and a moderate current gain (around 100), which makes it more suitable for linear amplification applications. If you need to use the transistor as a switch, you should ensure that the base drive is sufficient to fully saturate the transistor and that the collector current is within the maximum rating.
  • To protect the MJE15032 from electrostatic discharge (ESD), you should follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensuring that the transistor is stored in an ESD-safe environment. Additionally, you can add ESD protection devices, such as diodes or resistors, to the circuit to protect the transistor from ESD events.

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Part Image MJE15032G onsemi

Power Bipolar Transistor, 8A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin