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MJE170G - onsemi

Description: Annular Construction for Low Leakages - ICBO = 100 nA (Max) @ Rated VCB; DC Current Gain - hFE = 30 (Min) @ IC = 0.5 Adc hFE = 12 (Min) @ IC = 1.5 Adc; Current-Gain - Bandwidth Product - fT = 50 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc - MJE171, MJE181 VCEO(sus) = 80 Vdc - MJE172, MJE182; Pb-Free Packages are Available

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PCB Footprints
MJE170G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
MJE170G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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MJE170G Details

  • Manufacturer Part Number:

    MJE170G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    3 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    12

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

MJE170G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE170G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and to avoid operating the device near its maximum ratings for extended periods.
  • To ensure the MJE170G is properly biased for linear operation, it's essential to follow the recommended biasing scheme outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. Additionally, the base current should be limited to prevent overheating and ensure stable operation.
  • The recommended heatsink design for the MJE170G involves using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. The heatsink should have a thermal resistance of less than 10°C/W and a surface finish that ensures good thermal contact with the device. A heatsink with a large surface area and a low thermal resistance is recommended to ensure efficient heat dissipation.
  • To handle ESD protection for the MJE170G, it's essential to follow proper handling and storage procedures to prevent electrostatic discharge (ESD) damage. This includes using ESD-safe materials, grounding oneself before handling the device, and storing the device in an ESD-safe environment. Additionally, consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design to protect the MJE170G from ESD events.
  • When designing a PCB layout for the MJE170G, it's essential to consider the device's thermal and electrical characteristics. This includes using a thermal relief pattern under the device, keeping the lead length short, and using a ground plane to reduce electromagnetic interference (EMI). Additionally, ensure that the PCB material has a high thermal conductivity and that the device is properly secured to the PCB to prevent thermal stress.

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