Part Image

MJE210 - onsemi

Description: Lifetime - 5.0 A, 25 V PNP Bipolar Power Transistor

Download MJE210 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MJE210 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_225
click to zoom
3D Models
MJE210 - onsemi  - 3D model - Transistor Outline, Vertical - TO_225
click to zoom

MJE210 Details

  • Manufacturer Part Number:

    MJE210

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJE210 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE210 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 20-30% of the maximum rated power to ensure reliable operation.
  • To ensure the MJE210 is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6-0.8V, and the collector-emitter voltage (VCE) is at least 1-2V above the saturation voltage (VCE(sat)). Additionally, the base current should be limited to prevent over-biasing, which can lead to thermal runaway.
  • For optimal thermal management, it is recommended to use a PCB layout that provides good thermal conduction, such as a copper pour or a thermal pad, and to ensure that the device is mounted on a heat sink or a metal core PCB. Additionally, it is recommended to keep the device away from other heat sources and to use thermal vias to dissipate heat.
  • Yes, the MJE210 can be used as a switch, but it is not recommended for high-frequency switching applications due to its relatively slow switching times (tf and tr). Additionally, the device may not be suitable for high-current switching applications due to its limited current handling capability.
  • To protect the MJE210 from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins. Additionally, it is recommended to handle the device with ESD-safe materials and to follow proper ESD handling procedures.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MJE210 Overview

Use the download button to access the MJE210 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MJE21, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJE210

Showing 0 results

MJE210 Alternates

Showing results

Image Part Number Model
Part Image MJE210G Rochester Electronics LLC

5A, 40V, PNP, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN

Part Image MJE210TG onsemi

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin

Part Image MJE210 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE210 Central Semiconductor Corp

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE210T onsemi

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for MJE210, check out Findchips.com