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MJE210G - onsemi

Description: High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc hFE = 45 (Min) @ IC = 2.0 Adc hFE = 10 (Min) @ IC = 5.0 Adc; Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc; High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc; Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc; Pb-Free Packages are Available

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PCB Footprints
MJE210G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-126
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MJE210G - onsemi  - 3D model - Transistor Outline, Vertical - TO-126
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MJE210G Details

  • Manufacturer Part Number:

    MJE210G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    111 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    10

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    65 MHz

MJE210G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE210G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and the maximum collector-emitter voltage (Vce). For the MJE210G, the maximum Tj is 150°C, and the maximum Vce is 250V. Engineers should consult the device's thermal and electrical characteristics to determine the maximum SOA for their specific application.
  • To ensure the MJE210G is properly biased for linear operation, engineers should follow these guidelines: 1) Choose a suitable collector-emitter voltage (Vce) that is within the recommended operating range (typically 10-100V). 2) Select a base-emitter voltage (Vbe) that is within the recommended range (typically 0.6-0.8V). 3) Ensure the base current (Ib) is sufficient to maintain the desired collector current (Ic). 4) Verify that the device is operating within its recommended temperature range (typically -55°C to 150°C). 5) Consult the datasheet for specific biasing recommendations and application notes.
  • To prevent damage and ensure the reliability of the MJE210G, engineers should follow proper storage and handling procedures: 1) Store the devices in their original packaging or in a dry, cool place. 2) Avoid exposing the devices to moisture, extreme temperatures, or physical stress. 3) Handle the devices by the body, not the leads, to prevent damage. 4) Use anti-static wrist straps or mats to prevent electrostatic discharge (ESD) damage. 5) Follow the manufacturer's recommended storage and handling guidelines, as outlined in the datasheet or application notes.
  • While the MJE210G is primarily designed for linear amplifier applications, it can be used in switching applications with some caution. However, engineers should be aware of the device's limitations: 1) The MJE210G has a relatively slow switching time (typically 10-20μs) compared to dedicated switching transistors. 2) The device's maximum collector-emitter voltage (Vce) and collector current (Ic) ratings may not be suitable for high-frequency switching applications. 3) Engineers should carefully evaluate the device's thermal and electrical characteristics to ensure reliable operation in their specific application.
  • To determine the MJE210G's thermal resistance (RθJA) in a specific application, engineers can follow these steps: 1) Consult the datasheet for the device's thermal characteristics, including the junction-to-ambient thermal resistance (RθJA). 2) Consider the device's package type, PCB layout, and thermal interface materials. 3) Use thermal simulation tools or consult with thermal experts to estimate the device's thermal resistance in the specific application. 4) Verify the device's thermal performance through thermal testing and characterization.

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MJE210G Overview

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Part Image MJE210G Rochester Electronics LLC

5A, 40V, PNP, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN

Part Image MJE210TG onsemi

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin

Part Image MJE210 Fairchild Semiconductor Corporation

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE210T onsemi

Power Bipolar Transistor, 5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-225, Plastic/Epoxy, 3 Pin

Part Image MJE210 Central Semiconductor Corp

Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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