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MJE270G - onsemi

Description: High DC Current Gain hFE @ 120 mA, 10 V = 1,500 (Min); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min); High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A - TO-126; These Devices are Pb−Free and are RoHS Compliant

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MJE270G - onsemi PCB footprint - Other - Other - MJE270G-3
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MJE270G Details

  • Manufacturer Part Number:

    MJE270G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON

  • DC Current Gain-Min (hFE):

    1500

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    BOX

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    1.5 W

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    6 MHz

  • VCEsat-Max:

    3 V

MJE270G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE270G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, collector-emitter voltage, and collector current.
  • To ensure the MJE270G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.7V), and the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. Additionally, the collector current should be limited to prevent thermal runaway.
  • For optimal thermal management, it is recommended to use a PCB layout that provides good thermal conductivity, such as a copper pour or a thermal pad. Additionally, ensure that the device is mounted on a heat sink or a thermal interface material (TIM) to dissipate heat efficiently.
  • Yes, the MJE270G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the collector-emitter saturation voltage. Additionally, ensure that the device is properly biased and that the collector current is limited to prevent overheating.
  • To protect the MJE270G from electrostatic discharge (ESD), it is recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit. Additionally, ensure that the PCB layout and handling procedures minimize the risk of ESD damage.

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Part Image MJE270G Rochester Electronics LLC

2A, 100V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, CASE 77-09, 3 PIN

Part Image MJE270 Continental Device India Ltd

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE270 onsemi

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-225, Plastic/Epoxy, 3 Pin