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MJE2955TG - onsemi

Description: DC Current Gain Specified to 10 Amperes; High Current Gain - Bandwidth Product - fT = 2.0 MHz (Min) @ IC fT = 500 mAdc; Pb-Free Packages are Available

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PCB Footprints
MJE2955TG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
MJE2955TG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MJE2955TG Details

  • Manufacturer Part Number:

    MJE2955TG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJE2955TG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE2955TG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the MJE2955TG is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6V to 0.8V, and the collector-emitter voltage (VCE) is at least 1V to 2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • The recommended heatsink design for the MJE2955TG depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of 1°C/W or lower is recommended. The heatsink should also be designed to provide good thermal contact with the device, and should be mounted using a thermally conductive interface material.
  • While the MJE2955TG is primarily designed for linear amplifier applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be as well-suited for high-frequency switching applications as other devices specifically designed for switching. Additionally, the device's maximum collector current and power dissipation ratings should be carefully considered to ensure reliable operation.
  • To protect the MJE2955TG from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static package, and should be connected to a ground plane or other ESD protection circuitry in the application circuit.

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MJE2955TG Overview

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