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MJE3055TG - onsemi

Description: DC Current Gain Specified to 10 Amperes; High Current Gain - Bandwidth Product - fT = 2.0 MHz (Min) @ IC fT = 500 mAdc; Pb-Free Packages are Available

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PCB Footprints
MJE3055TG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
MJE3055TG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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MJE3055TG Details

  • Manufacturer Part Number:

    MJE3055TG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    75 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    2 MHz

MJE3055TG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE3055TG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the device's power dissipation to 50-60% of its maximum rating to ensure reliable operation.
  • To ensure the MJE3055TG is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is between 0.6-0.8V, and the collector-emitter voltage (VCE) is at least 1-2V above the base-emitter voltage. Additionally, the collector current should be limited to the recommended maximum value to prevent thermal runaway.
  • For optimal thermal performance, it is recommended to use a PCB layout with a large copper area for heat dissipation, and to use thermal vias to connect the transistor's thermal pad to the copper plane. Additionally, a heat sink or thermal interface material can be used to further improve heat dissipation.
  • To protect the MJE3055TG from electrostatic discharge (ESD), it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays on the input and output pins. Additionally, proper handling and storage procedures should be followed to prevent ESD damage.
  • The MJE3055TG should be stored in a dry, cool place away from direct sunlight and moisture. It should be handled with anti-static wrist straps or mats to prevent ESD damage. The device should not be exposed to temperatures above 150°C or below -40°C during storage or handling.

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MJE3055TG Overview

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