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MJE3439G - onsemi

Description: 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 15 WATTS

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MJE3439G - onsemi PCB footprint - Other - Other - MJE3439G-6
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MJE3439G Details

  • Manufacturer Part Number:

    MJE3439G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, CASE 77-09, TO-225, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.3 A

  • Collector-Emitter Voltage-Max:

    350 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    15

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    15 MHz

MJE3439G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE3439G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A general rule of thumb is to limit the collector current to 5A and the collector-emitter voltage to 30V to ensure safe operation.
  • To ensure proper biasing for linear amplifier applications, it's essential to set the quiescent collector current (Icq) to around 10-20% of the maximum collector current (Ic). This can be achieved by adjusting the base-emitter voltage (Vbe) and the collector-emitter voltage (Vce) to achieve the desired Icq. Additionally, ensure the transistor is operated within its recommended operating conditions and that the power supply is stable.
  • The recommended storage temperature range for the MJE3439G is -55°C to 150°C. It's essential to store the device within this range to prevent damage and ensure its reliability.
  • While the MJE3439G is primarily designed for linear amplifier applications, it can be used in switching applications with some caution. However, it's essential to ensure the device is operated within its recommended switching frequency, and the collector current and voltage are within the device's ratings. Additionally, consider the device's switching characteristics, such as turn-on and turn-off times, to ensure reliable operation.
  • To handle ESD protection for the MJE3439G, it's recommended to follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the device in an ESD-protected environment. Additionally, consider adding ESD protection circuits, such as a transient voltage suppressor (TVS) or a zener diode, to the device's input and output pins to prevent damage from electrostatic discharge.

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MJE3439G Overview

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MJE3439G Alternates

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Part Image MJE3439 Rochester Electronics LLC

0.3A, 350V, NPN, Si, POWER TRANSISTOR, TO-225AA, CASE 77-09, TO-225, 3 PIN

Part Image MJE3439G Rochester Electronics LLC

0.3A, 350V, NPN, Si, POWER TRANSISTOR, TO-225AA, ROHS COMPLIANT, CASE 77-09, TO-225, 3 PIN

Part Image MJE3439 onsemi

Power Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin

Part Image MJE3439 STMicroelectronics

Power Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Part Image MJE3439LEADFREE Central Semiconductor Corp

Power Bipolar Transistor, 0.3A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

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