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MJE350G - onsemi

Description: High Collector-Emitter Sustaining Voltage - VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc; Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc; Pb-Free Package is Available

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PCB Footprints
MJE350G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-225 CASE 77-09
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3D Models
MJE350G - onsemi  - 3D model - Transistor Outline, Vertical - TO-225 CASE 77-09
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MJE350G Details

  • Manufacturer Part Number:

    MJE350G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Collector Current-Max (IC):

    0.5 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE350G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE350G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to limit the device's power dissipation to 2-3 watts, and ensure that the junction temperature remains below 150°C.
  • To ensure the MJE350G is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1-2V. This can be achieved by using a voltage divider network to set the base voltage and a current-limiting resistor to set the collector current.
  • The recommended storage temperature range for the MJE350G is -55°C to 150°C. It's essential to store the device within this range to prevent damage and ensure reliable operation.
  • Yes, the MJE350G can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the collector-emitter saturation voltage (VCE(sat)). Additionally, ensure that the device is properly biased and that the collector current is limited to prevent overheating.
  • To handle ESD protection for the MJE350G, it's recommended to use ESD protection devices, such as TVS diodes or ESD protection arrays, on the input and output pins of the device. Additionally, ensure that the device is handled and stored in an ESD-safe environment.

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MJE350G Overview

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Part Image MJE350 General Transistor Corp

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Part Image MJE350STU onsemi

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Part Image KSE350STU onsemi

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Part Image KSE350S Fairchild Semiconductor Corporation

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For a full list of alternate parts for MJE350G, check out Findchips.com