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MJE4353 - onsemi

Description: Obsolete - 16 A, 160 V PNP Bipolar Power Transistor

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PCB Footprints
MJE4353 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L ISSUE G
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3D Models
MJE4353 - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L ISSUE G
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MJE4353 Details

  • Manufacturer Part Number:

    MJE4353

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-93 (T0-218) 4 LEAD

  • Package Description:

    CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340D-02

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-218

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    1 MHz

MJE4353 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE4353 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the MJE4353 is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to around 1/2 of the supply voltage. Additionally, the base current should be limited to prevent saturation and ensure linear operation.
  • The recommended heatsink design for the MJE4353 depends on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of around 1-2°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the device, and thermal interface materials (TIMs) can be used to improve heat transfer.
  • While the MJE4353 is primarily designed for linear applications, it can be used in switching applications with some caution. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's safe operating area (SOA) should be carefully considered to prevent device damage.
  • To protect the MJE4353 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. This includes using anti-static wrist straps, mats, and bags, as well as grounding all equipment and tools. Additionally, ESD protection devices, such as TVS diodes, can be used to protect the device from ESD events.

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MJE4353 Overview

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Image Part Number Model
Part Image MJE4353 Rochester Electronics LLC

16A, 160V, PNP, Si, POWER TRANSISTOR, TO-218, CASE 340D-02, 3 PIN

Part Image MJE4353G onsemi

Power Bipolar Transistor, 16A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin