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MJE4353G - onsemi

Description: 16 A, 160 V PNP Bipolar Power Transistor

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PCB Footprints
MJE4353G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SOT−93 (TO−218) CASE 340D−02 ISSUE E
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3D Models
MJE4353G - onsemi  - 3D model - Transistor Outline, Vertical - SOT−93 (TO−218) CASE 340D−02 ISSUE E
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MJE4353G Details

  • Manufacturer Part Number:

    MJE4353G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340D-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340D-02

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-218

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    125 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    1 MHz

MJE4353G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE4353G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 20-30% of the maximum rated power to ensure reliable operation.
  • To ensure the MJE4353G is properly biased for linear operation, it's essential to follow the recommended biasing conditions outlined in the datasheet. This typically involves setting the base-emitter voltage (VBE) to around 0.7V and the collector-emitter voltage (VCE) to a value that allows for the desired current flow. Additionally, it's crucial to ensure the device is operated within its recommended temperature range.
  • The recommended PCB layout and thermal management for the MJE4353G involve using a thermally conductive PCB material, such as FR4 or Rogers, and ensuring good thermal conduction between the device and the PCB. A heat sink or thermal pad can be used to further improve heat dissipation. It's also essential to follow good PCB design practices, such as minimizing trace lengths and using wide traces to reduce thermal resistance.
  • To handle ESD protection for the MJE4353G, it's recommended to follow standard ESD protection practices, such as using ESD-sensitive handling procedures during assembly and installation. Additionally, incorporating ESD protection devices, such as TVS diodes or ESD protection arrays, into the circuit design can help protect the device from electrostatic discharge events.
  • The reliability and lifespan expectations for the MJE4353G are dependent on various factors, including operating conditions, temperature, and usage patterns. However, onsemi provides reliability data and guidelines in the datasheet and application notes, which can be used to estimate the device's expected lifespan. Typically, the MJE4353G can operate reliably for 10-20 years or more under normal operating conditions.

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MJE4353G Overview

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Image Part Number Model
Part Image MJE4353 Rochester Electronics LLC

16A, 160V, PNP, Si, POWER TRANSISTOR, TO-218, CASE 340D-02, 3 PIN

Part Image MJE4353 onsemi

Power Bipolar Transistor, 16A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin