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MJE5850 - onsemi

Description: Obsolete - 8.0 A, 300 V PNP Bipolar Power Transistor

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MJE5850 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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MJE5850 - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A−09 ISSUE AJ
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MJE5850 Details

  • Manufacturer Part Number:

    MJE5850

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    80 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MJE5850 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE5850 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's maximum junction temperature, voltage, and current ratings.
  • To ensure the MJE5850 is properly biased for linear operation, the base-emitter voltage (VBE) should be set to around 0.7V, and the collector-emitter voltage (VCE) should be set to a value that allows the transistor to operate in the active region. The exact biasing conditions will depend on the specific application and circuit design.
  • The recommended heatsink design for the MJE5850 will depend on the specific application and power dissipation requirements. However, as a general guideline, a heatsink with a thermal resistance of around 1-2°C/W is recommended. The heatsink should also be designed to provide good thermal contact with the transistor's package.
  • While the MJE5850 is primarily designed for linear applications, it can be used in switching applications with some caution. However, the transistor's switching characteristics, such as its turn-on and turn-off times, may not be optimized for high-frequency switching. Additionally, the device's maximum collector-emitter voltage rating should be carefully considered to ensure reliable operation.
  • The MJE5850 should be stored in a dry, cool place, away from direct sunlight and moisture. The device should be handled with care to avoid mechanical stress, and electrostatic discharge (ESD) precautions should be taken to prevent damage to the device.

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MJE5850 Overview

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Part Image MJE5850G onsemi

Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin