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MJE800G - onsemi

Description: Obsolete - 4.0 A, 60 V NPN Darlington Bipolar Power Transistor

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PCB Footprints
MJE800G - onsemi PCB footprint - Other - Other - TO−225 CASE 77−09 ISSUE AD_2024-3
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3D Models
MJE800G - onsemi  - 3D model - Other - TO−225 CASE 77−09 ISSUE AD_2024-3
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MJE800G Details

  • Manufacturer Part Number:

    MJE800G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    77-09

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    BUILT IN BIAS RESISTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-225

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    40 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    1 MHz

MJE800G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MJE800G is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal and electrical characteristics. A general guideline is to ensure that the device operates within the recommended voltage and current ratings, and that the junction temperature remains below 150°C.
  • To ensure the MJE800G is properly biased for linear operation, it's essential to set the base-emitter voltage (VBE) and collector-emitter voltage (VCE) within the recommended ranges. Typically, VBE should be around 0.7V, and VCE should be around 1-2V. Additionally, ensure the collector current is within the recommended range, and the device is operated within the recommended temperature range.
  • The recommended storage temperature range for the MJE800G is -55°C to 150°C. It's essential to store the device within this range to prevent damage and ensure reliable operation.
  • While the MJE800G is primarily designed for linear applications, it can be used in switching applications with caution. However, it's essential to ensure the device is operated within the recommended switching frequency, and the collector current is within the recommended range. Additionally, consider the device's switching characteristics, such as turn-on and turn-off times, to ensure reliable operation.
  • To handle ESD protection for the MJE800G, it's essential to follow proper handling and storage procedures. Use anti-static wrist straps, mats, and bags to prevent electrostatic discharge. Additionally, ensure the device is stored in a conductive container or bag to dissipate any static electricity.

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MJE800G Overview

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