Part Image

MJW21193G - onsemi

Description: Total Harmonic Distortion Characterized; High DC Current Gain - hFE = 20 Min @ IC = 8 Adc; Excellent Gain Linearity; High SOA: 2.25 A, 80 V, 1 Second

Download MJW21193G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MJW21193G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom
3D Models
MJW21193G - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom

MJW21193G Details

  • Manufacturer Part Number:

    MJW21193G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340L-02, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJW21193G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the thermal pad to improve heat dissipation.
  • Ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to maintain a safe operating temperature. Monitor the device's thermal resistance (RθJA) and adjust the system design accordingly.
  • Implement ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins to protect against electrostatic discharge. Follow the recommended PCB layout guidelines for ESD protection devices and ensure they are properly connected to the device's pins.
  • Use a combination of ceramic and electrolytic capacitors to decouple the power supply. Place a 100nF ceramic capacitor close to the device's power pins, and a 10uF electrolytic capacitor further away. Ensure the capacitors are properly connected to the power pins and the PCB's ground plane.
  • Follow the recommended soldering temperature profile: 240°C for 10-15 seconds. For rework, use a low-temperature soldering iron (below 350°F) and avoid applying excessive heat or force, which can damage the device.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MJW21193G Overview

Use the download button to access the MJW21193G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MJW21, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJW21193G

Showing 0 results