Part Image

MJW21195G - onsemi

Description: Total Harmonic Distortion Characterized; High DC Current Gain –hFE = 20 Min @ IC = 8 Adc; Excellent Gain Linearity; High SOA: 2.25 A, 80 V, 1 Second; Pb-Free Packages are Available

Download MJW21195G Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MJW21195G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom
3D Models
MJW21195G - onsemi  - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
click to zoom

MJW21195G Details

  • Manufacturer Part Number:

    MJW21195G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340L-02, TO-247, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJW21195G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane and ensure good thermal conductivity.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Monitor the device's temperature, voltage, and current. Implement over-temperature protection (OTP), over-voltage protection (OVP), and over-current protection (OCP) to prevent damage and ensure reliable operation.
  • Consult the application notes and reference designs provided by onsemi. Perform thorough simulations and testing to optimize the device's performance for your specific use case, taking into account factors like input voltage, output current, and thermal management.
  • Follow the recommended soldering profile and assembly guidelines provided by onsemi. Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the device is handled and stored in an ESD-safe environment.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MJW21195G Overview

Use the download button to access the MJW21195G schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MJW21, or try a keyword search, such as Power Bipolar Transistors

Parts related to MJW21195G

Showing 0 results