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MJW21196G - onsemi

Description: Total Harmonic Distortion Characterized; High DC Current Gain –hFE = 20 Min @ IC = 8 Adc; Excellent Gain Linearity; High SOA: 2.25 A, 80 V, 1 Second; Pb-Free Packages are Available

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Symbol
MJW21196G - onsemi - PCB symbol
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PCB Footprints
MJW21196G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 CASE 340L-02
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3D Models
MJW21196G - onsemi - 3D model - Transistor Outline, Vertical - TO-247 CASE 340L-02
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MJW21196G Details

  • Manufacturer Part Number:

    MJW21196G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    CASE 340L-02, TO-247, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340L-02

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    250 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    8

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    4 MHz

MJW21196G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. Multiple vias can be used to connect the thermal pad to an inner layer or the backside of the PCB for better heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to reduce the junction temperature. Monitor the device's thermal resistance (RθJA) and ensure it is within the specified range.
  • Handle the device in an ESD-protected environment. Use an anti-static wrist strap or mat, and ensure that all equipment and tools are grounded. Avoid touching the device's pins or leads, and use ESD-safe packaging and storage materials.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 Ω to 100 Ω. A higher value can reduce EMI, but may increase switching losses. Consult the application note or onsemi's support team for more guidance.
  • Ensure that each device has its own gate resistor and that the gate signals are properly synchronized. Use a common source inductor or a current-sharing bus to connect the devices in parallel. Consult the application note or onsemi's support team for more guidance on paralleling devices.

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MJW21196G Overview

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MJW21196G Alternates

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Image Part Number Model
Part Image MJW21196G Rochester Electronics LLC

16A, 250V, NPN, Si, POWER TRANSISTOR, TO-247AD, LEAD FREE, CASE 340L-02, TO-247, 3 PIN
Part Image MJW21196 onsemi

Power Bipolar Transistor, 16A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-247AD, Plastic/Epoxy, 3 Pin