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MMBD352WT1G - onsemi

Description: Low Forward Voltage - 0.5 Volts (Typ) @ IF = 10 mA; Very Low Capacitance - Less Than 1.0 pF @ Zero Volts; Pb-Free Package is Available; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

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Symbol
MMBD352WT1G - onsemi - PCB symbol
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PCB Footprints
MMBD352WT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323)
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3D Models
MMBD352WT1G - onsemi - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323)
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MMBD352WT1G Details

  • Manufacturer Part Number:

    MMBD352WT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.60

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Capacitance-Max:

    1 pF

  • Diode Element Material:

    SILICON

  • Diode Type:

    MIXER DIODE

  • Frequency Band:

    ULTRA HIGH FREQUENCY

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBD352WT1G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the MMBD352WT1G is a standard SOT-23 package with a 1.3mm x 1.3mm pad size, 0.5mm lead pitch, and a thermal pad for heat dissipation.
  • To ensure reliable operation in high-temperature environments, ensure proper heat sinking, keep the junction temperature (Tj) below 150°C, and follow the recommended derating curves for power dissipation.
  • The maximum allowable voltage for the MMBD352WT1G is 40V, but it's recommended to operate within the specified maximum ratings to ensure reliability and prevent damage.
  • Yes, the MMBD352WT1G can be used as a switch in high-frequency circuits, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance. Also, consider the transistor's transition frequency (ft) and maximum operating frequency.
  • To protect the MMBD352WT1G from ESD, follow proper handling and storage procedures, use ESD-safe materials, and consider adding ESD protection circuits or devices in the design.

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MMBD352WT1G Overview

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Part Image MMBD352WT1 onsemi

Mixer Diode, Ultra High Frequency, Silicon