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MMBD355LT1G - onsemi

Description: Low Forward Voltage - 0.5 Volts (Typ) @ IF = 10 mA; Very Low Capacitance - Less Than 1.0 pF @ Zero Volts; Pb-Free Packages are Available; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable

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PCB Footprints
MMBD355LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23A
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3D Models
MMBD355LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23A
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MMBD355LT1G Details

  • Manufacturer Part Number:

    MMBD355LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.60

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Configuration:

    COMMON ANODE, 2 ELEMENTS

  • Diode Capacitance-Max:

    1 pF

  • Diode Element Material:

    SILICON

  • Diode Type:

    MIXER DIODE

  • Frequency Band:

    ULTRA HIGH FREQUENCY

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

MMBD355LT1G Frequently Asked Questions (FAQs)

  • The recommended soldering temperature profile for MMBD355LT1G is a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
  • Yes, the MMBD355LT1G is suitable for high-frequency applications due to its low capacitance (CP) of 1.5 pF and low reverse recovery time (trr) of 2 ns.
  • Yes, the MMBD355LT1G is suitable for use in switching power supplies due to its high switching speed, low forward voltage drop (VF), and high surge current capability.
  • The maximum allowable power dissipation for the MMBD355LT1G is 500 mW, and it is recommended to derate the power dissipation based on the ambient temperature and thermal resistance of the device.
  • No, the MMBD355LT1G is not radiation-hardened. If you need a radiation-hardened diode, you should consider a different part number or consult with onsemi's application engineers.

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MMBD355LT1G Overview

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