Part Image

MMBF170 - onsemi

Description: High saturation current capability; High density cell design for low RDS(ON); Voltage controlled small signal switch; Rugged and reliable

Download MMBF170 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMBF170 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236)CASE 318-08 ISSUE AR
click to zoom
3D Models
MMBF170 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236)CASE 318-08 ISSUE AR
click to zoom

MMBF170 Details

  • Manufacturer Part Number:

    MMBF170

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.5 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMBF170 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the MMBF170 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and power dissipation. A general rule of thumb is to limit the device's power dissipation to 1/4 of the maximum rated power to ensure reliable operation.
  • To ensure the MMBF170 is properly biased, follow these guidelines: 1) Choose a suitable collector-emitter voltage (Vce) based on the application's requirements. 2) Select a base-emitter voltage (Vbe) that provides the desired current gain. 3) Ensure the base current is sufficient to maintain the desired collector current. 4) Verify the device is operating within its recommended operating conditions.
  • To ensure reliable operation, consider the following thermal management strategies: 1) Provide adequate heat sinking to maintain a low junction temperature (Tj). 2) Use a thermal interface material (TIM) to reduce thermal resistance between the device and heat sink. 3) Ensure good airflow around the device to enhance convection cooling. 4) Monitor the device's temperature and adjust the operating conditions accordingly.
  • To protect the MMBF170 from ESD, follow these guidelines: 1) Handle the device by the body or use an anti-static wrist strap. 2) Use an ESD-protected workstation or mat. 3) Store the device in an anti-static bag or container. 4) Avoid touching the device's pins or leads. 5) Use ESD-protected tools and equipment.
  • The MMBF170's reliability and lifespan are influenced by factors such as operating conditions, temperature, and quality of the device. Onsemi provides reliability data in the datasheet, including the mean time to failure (MTTF) and failure rate. However, actual lifespan may vary depending on the specific application and operating conditions.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMBF170 Overview

Use the download button to access the MMBF170 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMBF1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to MMBF170

Showing 0 results

MMBF170 Alternates

Showing results

Image Part Number Model
Part Image MMBF170 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image MMBF170-7 Diodes Incorporated

Power Field-Effect Transistor, 0.5A I(D), 60V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image MMBF170-13 Diodes Incorporated

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SMMBF170LT1 onsemi

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Image MMBF170_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

For a full list of alternate parts for MMBF170, check out Findchips.com