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MMBF4392LT1G - onsemi

Description: Pb-Free Packages are Available; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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MMBF4392LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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MMBF4392LT1G - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318 ISSUE AU
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MMBF4392LT1G Details

  • Manufacturer Part Number:

    MMBF4392LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain-source On Resistance-Max:

    60 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.5 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMBF4392LT1G Frequently Asked Questions (FAQs)

  • The maximum SOA for the MMBF4392LT1G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, current handling, and voltage ratings.
  • To ensure proper biasing, follow the recommended operating conditions and biasing circuits provided in the datasheet. Additionally, consider the device's current gain, base-emitter voltage, and collector-emitter voltage when designing the biasing circuit.
  • The MMBF4392LT1G has a maximum junction temperature of 150°C. To ensure reliable operation, provide adequate heat sinking, consider the device's thermal resistance, and maintain a safe operating temperature margin.
  • While the MMBF4392LT1G is primarily designed for linear amplification, it can be used in switching applications with careful consideration of the device's switching characteristics, such as transition frequency, rise and fall times, and switching losses.
  • Follow proper ESD handling and storage procedures to prevent damage to the device. Use ESD-protective packaging, handling tools, and workstations to minimize the risk of ESD damage.

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MMBF4392LT1G Overview

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Part Image MMBF4392 Fairchild Semiconductor Corporation

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Part Image MMBF4392LT1 Motorola Semiconductor Products

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Part Image MMBF4392 EDI Diodes (Electronic Devices Inc)

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Part Image MMBF4392LT1 onsemi

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Part Image MMBF4392 onsemi

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB

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