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MMBF5459 - onsemi

Description: Obsolete - P-Channel General Purpose Amplifier

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PCB Footprints
MMBF5459 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O-1
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3D Models
MMBF5459 - onsemi  - 3D model - SOT23 (3-Pin) - SOT−23 CASE 318BM ISSUE O-1
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MMBF5459 Details

  • Manufacturer Part Number:

    MMBF5459

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23-3

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318BM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    3 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

MMBF5459 Frequently Asked Questions (FAQs)

  • The SOA for the MMBF5459 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of 1A/10V, 2A/5V, and 3A/3V.
  • To ensure linear operation, the MMBF5459 should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is around 1-2V. The base current should be limited to prevent saturation, and the collector current should be limited to prevent overheating.
  • A good PCB layout for the MMBF5459 should minimize thermal resistance by using a large copper area for the collector pin, and keeping the base and emitter pins close together. Thermal management can be achieved by using a heat sink or a thermal pad, and ensuring good airflow around the device.
  • To protect the MMBF5459 from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB has ESD protection circuits such as TVS diodes or resistors. The device should also be stored in an anti-static bag or tube.
  • The MMBF5459 should be stored in a cool, dry place, away from direct sunlight and moisture. The device should be handled by the body or with anti-static materials, and should not be exposed to mechanical stress or vibration.

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MMBF5459 Overview

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Part Image MMBF5459 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET