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MMBF5485 - onsemi

Description: SOT-23

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PCB Footprints
MMBF5485 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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3D Models
MMBF5485 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 (TO-236) CASE 318-08 ISSUE AS
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MMBF5485 Details

  • Manufacturer Part Number:

    MMBF5485

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Configuration:

    SINGLE

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBF5485 Frequently Asked Questions (FAQs)

  • The SOA for the MMBF5485 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of Vce = 20V, Ic = 1A, and Pd = 1W.
  • To ensure linear operation, the MMBF5485 should be biased in the active region, where Vbe is around 0.7V and Vce is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended operating range.
  • For optimal thermal performance, the MMBF5485 should be mounted on a PCB with a thermal pad and connected to a heat sink or a copper plane. The PCB layout should minimize thermal resistance and ensure good airflow around the device.
  • While the MMBF5485 is primarily designed for linear amplification, it can be used in switching applications with proper design considerations. However, the device's switching characteristics, such as turn-on and turn-off times, may not be optimized for high-frequency switching.
  • To protect the MMBF5485 from ESD, handle the device with anti-static wrist straps, mats, or bags. Ensure that the PCB and assembly process also follow ESD-safe practices to prevent damage during manufacturing and handling.

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MMBF5485 Overview

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Part Image MMBF5485 Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET