Part Image

MMBFJ309 - onsemi

Description: RF Mosfet 10 V 10 mA 450MHz 12dB SOT-23-3

Download MMBFJ309 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
MMBFJ309 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23 3L_2024
click to zoom
3D Models
MMBFJ309 - onsemi  - 3D model - SOT23 (3-Pin) - SOT-23 3L_2024
click to zoom

MMBFJ309 Details

  • Manufacturer Part Number:

    MMBFJ309

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

  • Package Description:

    SOT-23, 3 PIN

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBFJ309 Frequently Asked Questions (FAQs)

  • The MMBFJ309 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C for optimal performance.
  • To ensure proper biasing, the base-emitter voltage (Vbe) should be around 0.7V, and the collector-emitter voltage (Vce) should be around 1V to 2V. The base current should be limited to prevent overheating.
  • The maximum collector current (Ic) rating for the MMBFJ309 is 10A, and the maximum peak current rating is 15A. However, it's recommended to derate the current based on the operating temperature and other application-specific factors.
  • To protect the MMBFJ309 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. Avoid touching the device's pins or leads with bare hands.
  • For optimal thermal management, use a heat sink with a thermal resistance of around 10°C/W or lower. Ensure good thermal conductivity between the device and the heat sink. Use a PCB layout that minimizes thermal resistance and provides adequate clearance around the device.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

MMBFJ309 Overview

Use the download button to access the MMBFJ309 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like MMBFJ, or try a keyword search, such as Other Transistors

Parts related to MMBFJ309

Showing 0 results

MMBFJ309 Alternates

Showing results

Image Part Number Model
Part Image MMBFJ309 Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET