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MMBFJ309LT1G - onsemi

Description: Drain and Source are interchangable; SOT-23 Surface Mount Package Saves Board Space; Low rDS(on) Provides Higher Efficiency and Extends Battery Life; These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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PCB Footprints
MMBFJ309LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - MMBF5457-1+
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MMBFJ309LT1G - onsemi  - 3D model - SOT23 (3-Pin) - MMBF5457-1+
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MMBFJ309LT1G Details

  • Manufacturer Part Number:

    MMBFJ309LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.82

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBFJ309LT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the MMBFJ309LT1G is -55°C to 150°C.
  • To ensure reliability, follow proper storage and handling procedures, use a clean and dry environment, and avoid exceeding the maximum ratings specified in the datasheet.
  • Use a PCB layout that minimizes thermal resistance, provides adequate heat sinking, and follows the recommended land pattern and thermal pad layout specified in the datasheet.
  • Yes, the MMBFJ309LT1G can be used in switching applications, but ensure that the switching frequency and voltage are within the recommended operating conditions, and follow proper design guidelines for switching transistors.
  • Select resistor values based on the specific application requirements, taking into account the transistor's current gain, voltage, and power dissipation. Consult the datasheet and application notes for guidance.

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MMBFJ309LT1G Overview

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Part Image MMBFJ309LT1 onsemi

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB