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MMBFJ310LT1 - onsemi

Description: Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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MMBFJ310LT1 - onsemi - PCB symbol
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PCB Footprints
MMBFJ310LT1 - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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3D Models
MMBFJ310LT1 - onsemi - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236) 2.90x1.30x1.00 1.90P CASE 318 ISSUE AU
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MMBFJ310LT1 Details

  • Manufacturer Part Number:

    MMBFJ310LT1

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    CASE 318-08, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    25 V

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2.5 pF

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.225 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

MMBFJ310LT1 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the MMBFJ310LT1 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the MMBFJ310LT1 requires a minimum collector-emitter voltage (VCE) of 1.5V and a maximum collector current (IC) of 10mA. Additionally, the base-emitter voltage (VBE) should be around 0.7V for optimal performance.
  • The maximum power dissipation for the MMBFJ310LT1 is 625mW, which is calculated based on the maximum collector-emitter voltage (VCE) and collector current (IC).
  • Yes, the MMBFJ310LT1 can be used in switching applications, but it's essential to ensure that the switching frequency is within the recommended range (up to 100 kHz) and that the device is properly biased to avoid overheating.
  • To prevent electrostatic discharge (ESD) damage, it's recommended to use ESD protection devices, such as diodes or resistors, in series with the MMBFJ310LT1. Additionally, follow proper handling and storage procedures to minimize the risk of ESD damage.

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MMBFJ310LT1 Overview

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MMBFJ310LT1 Alternates

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Part Image MMBFJ310 Fairchild Semiconductor Corporation

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET
Part Image MMBFJ310 Texas Instruments

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Part Image MMBFJ310 EDI Diodes (Electronic Devices Inc)

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Part Image MMBFJ310LT3 onsemi

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB
Part Image MMBFJ310L99Z Texas Instruments

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For a full list of alternate parts for MMBFJ310LT1, check out Findchips.com